Crystallographic orientation dependence of carbon incorporation in atmospheric and low pressure MOCVD.

Title
Crystallographic orientation dependence of carbon incorporation in atmospheric and low pressure MOCVD.
Authors
손창식조신호최인훈김성일김용태정상욱
Keywords
carbon; MOCVD; GaAs; orientation
Issue Date
2002-12
Publisher
Journal of the Korean Physical Society
Citation
VOL 41, NO 6, 876-879
Abstract
In order to investigate the crystallographic orientation dependence of the electrical properies of carbon (C)-doped GaAs epolayers, we performed by high-index GaAs substractes. Epitaxial growths were carried out using atmospheric and low pressure metalorganic chemical vapor deposition (MOCVD) with C tetrabromide (CBr₄) as the C source. The electrical properties of C-doped GaAs showed a strong crystallographic orientation dependence. The hole concentrations of the C-doped GaAs epilayers rapidly decreased with increasing offset angle and had a (311)A peak. The crystallographic orientation dependences of hole concentration and of the activation energy, when using both MOCVD systems, showed the same tendency, implying that C incorporation on a growing surface proceeded thriugh a similar surface reaction process in both MOCVD systems.
URI
http://pubs.kist.re.kr/handle/201004/23043
ISSN
0374-4884
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