Effects of the thickness of dielectric capping layer and the distance of quantum wells from the sample surface on the intermixing of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering

Title
Effects of the thickness of dielectric capping layer and the distance of quantum wells from the sample surface on the intermixing of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering
Authors
유재수송진동이용탁임한조
Keywords
quantum well; photoluminescence
Issue Date
2003-02
Publisher
Journal of the Korean Physical Society
Citation
VOL 42, S458-S461
URI
http://pubs.kist.re.kr/handle/201004/23152
Appears in Collections:
KIST Publication > Article
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