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dc.contributor.author유재수-
dc.contributor.author송진동-
dc.contributor.author이용탁-
dc.contributor.author임한조-
dc.date.accessioned2015-12-02T07:50:51Z-
dc.date.available2015-12-02T07:50:51Z-
dc.date.issued200302-
dc.identifier.citationVOL 42, S458-S461-
dc.identifier.other17324-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/23152-
dc.publisherJournal of the Korean Physical Society-
dc.subjectquantum well-
dc.subjectphotoluminescence-
dc.titleEffects of the thickness of dielectric capping layer and the distance of quantum wells from the sample surface on the intermixing of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering-
dc.typeArticle-
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