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dc.contributor.author송진동-
dc.contributor.authorY. M. Park-
dc.contributor.authorJ. G. Lim-
dc.contributor.author신재철-
dc.contributor.author박용주-
dc.contributor.author최원준-
dc.contributor.author한일기-
dc.contributor.author조운조-
dc.contributor.author이정일-
dc.date.accessioned2015-12-02T07:51:16Z-
dc.date.available2015-12-02T07:51:16Z-
dc.date.issued200308-
dc.identifier.citationVOL 5224-
dc.identifier.other18197-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/23241-
dc.publisherProceeding of SPIE Annual Meeting 2003-
dc.subjectInAs-
dc.titleRole of InxGa1-xAs strain relaxation layers in optical and structural properties of InAs/GaAs quantum dots-
dc.typeConference Paper-
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