Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO₂ and SiNx capping films

Title
Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO₂ and SiNx capping films
Authors
이정호최원준박용주한일기이정일조운조김은규
Keywords
quantum dot; intermixing; thermal treatment
Issue Date
2003-06
Publisher
Physica Status Solidi (C)
Citation
VOL 1, NO 4, 1185-1188
URI
http://pubs.kist.re.kr/handle/201004/23260
ISSN
1610-1634
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE