High optical responsivity of InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels

Title
High optical responsivity of InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels
Authors
C.-S. ChoiH.-S. Kang최우영김회종최원준김동명K.-C. JangK.-S. Seo
Keywords
metamorphic high-electron mobility transistor (HEMT); photodetector; phototransistor; responsivity
Issue Date
2003-06
Publisher
IEEE Photonics Technology Letters
Citation
VOL 15, NO 6, 846-848
URI
http://pubs.kist.re.kr/handle/201004/23264
ISSN
1041-1135
Appears in Collections:
KIST Publication > Article
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