Effects of implantation conditions on the luminescence properties of Eu-doped GaN

Title
Effects of implantation conditions on the luminescence properties of Eu-doped GaN
Authors
Y. NakanishiA. WakaharaH. OkadaA. YoshidaT. OhshimaH. ItohS. NakaoK. Saito김용태
Keywords
GaN; Eu; ion implantation; photoluminescence; RBS/channeling
Issue Date
2003-05
Publisher
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
Citation
v. 206, 1033-1036
URI
http://pubs.kist.re.kr/handle/201004/23286
ISSN
0168-583X
Appears in Collections:
KIST Publication > Article
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