Effects of substrate orientation, temperature, and hole concentration on the bandgap energy of carbon-doped GaAs

Title
Effects of substrate orientation, temperature, and hole concentration on the bandgap energy of carbon-doped GaAs
Authors
조신호김은규
Keywords
doping
Issue Date
2001-06
Publisher
Journal of crystal growth
Citation
VOL 226, 240-246
URI
http://pubs.kist.re.kr/handle/201004/23613
ISSN
0022-0248
Appears in Collections:
KIST Publication > Article
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