Improvement of the reliability of a Cu/W-N/SiOF Multilevel interconnect by inserting plasma enhanced chemical vapor deposited W-N thin film

Title
Improvement of the reliability of a Cu/W-N/SiOF Multilevel interconnect by inserting plasma enhanced chemical vapor deposited W-N thin film
Authors
김동준심현상이세경김용태김성일박종완
Keywords
W-N; SiOF; surface energy; diffusion barrier; stress relaxation
Issue Date
2001-03
Publisher
Japanese Journal of Applied Physics, Part 1- Regular Papers
Citation
VOL 40, NO 3A, 1214-1217
URI
http://pubs.kist.re.kr/handle/201004/23658
ISSN
0021-4922
Appears in Collections:
KIST Publication > Article
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