Computer simulation of magnetization flop in magnetic tunnel junctions

Title
Computer simulation of magnetization flop in magnetic tunnel junctions
Authors
엄영랑임상호
Keywords
Size effects; Computer simulation; magnetic tunnel junctions; Magnetization flop; Synthetic antiferromagnets
Issue Date
2001-12
Publisher
Journal of magnetism and magnetic materials
Citation
VOL 237, NO 2, 206-214
Abstract
Computer simulation in a single domain multilayer model is used to investigate magnetization flop in magnetic tunnel junctions, exchange-biased by pinned synthetic antiferromagnets with the multilayer structure NiFe/AlOx/Co/Ru/Co/ FeMn. The resistance to magnetization flop increases with decreasing cell size due to increased shape anisotropy and hence increased coercivity of the Co layers in the synthetic antiferromagnet. However, when the synthetic antiferromagnet is not or weakly pinned, the magnetization directions of the two layers sandwiching AlOx, which mainly determine the magnetoresistance, are aligned antiparallel due to a strong magnetostatic interaction, resulting in an abnormal MR change from the high MR state to zero, irrespective of the direction of the free layer switching. This emphasizes an importance of a strong pinning of the synthetic antiferromagnet at small cell dimensions. The threshold field for magnetization flop is found to increase linearly with increasing antiferromagnetic exchange coupling between the two Co layers in the synthetic antiferromagnet. The restoring force from magnetization flop to the normal synthetic antiferromagnetic structure is roughly proportional to the resistance to magnetization flop. Irrespective of the magnetic parameters and cell sizes, the state of magnetization flop does not exist near Ha ¼ 0; indicating that magnetization flop is driven by the Zeeman energy. r 2001 Elsevier Science B.V. All rights reserved.
URI
http://pubs.kist.re.kr/handle/201004/23689
ISSN
0304-8853
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KIST Publication > Article
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