A study of GaN characteristics affected by stress existing in N+-implanted Si(111) substrate

Title
A study of GaN characteristics affected by stress existing in N+-implanted Si(111) substrate
Authors
고의관박용주김은규박찬수이석현이정희조성호
Keywords
GaN
Issue Date
2000-01
Publisher
Proc. 7th Korean Conf. on Semiconductors; 제 7 회 한국반도체 학술대회
Citation
, 507-508
URI
http://pubs.kist.re.kr/handle/201004/23908
Appears in Collections:
KIST Publication > Conference Paper
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