Dopant activation and strain relaxation in P-implanted metastable pseudomorphic Ge//0//.//1//2Si//0//.//8//8 grown on Si(100).

Title
Dopant activation and strain relaxation in P-implanted metastable pseudomorphic Ge//0//.//1//2Si//0//.//8//8 grown on Si(100).
Authors
송종한D. Y. C. LieN. D. Theodore
Issue Date
1996-02
Publisher
Applied surface science
Citation
v. 92, 557-565
URI
http://pubs.kist.re.kr/handle/201004/24492
Appears in Collections:
KIST Publication > Article
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