Properties of carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition using CCl//4.

Title
Properties of carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition using CCl//4.
Authors
김성일김용이민석김무성민석기손창식최인훈
Keywords
carbon doping
Issue Date
1996-01
Publisher
Journal of crystal growth
Citation
v. 165, 222-226
URI
http://pubs.kist.re.kr/handle/201004/24531
ISSN
0022-0248
Appears in Collections:
KIST Publication > Article
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