The properties of nitrogen implanted tungsten diffusion barrier for Cu metallization.

Title
The properties of nitrogen implanted tungsten diffusion barrier for Cu metallization.
Authors
김용태C. S. KwonD. J. KimJ. Y. LeeI. H. Choi
Issue Date
1995-06
Publisher
Proc. of the 2nd Korea-China symp. on ion beam modification of materials and thin film materials
Citation
, ?-?
URI
http://pubs.kist.re.kr/handle/201004/24601
Appears in Collections:
KIST Publication > Conference Paper
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