Dependence of damage and strain on the temperature of Si irradiation in epitaxial Geㅊ.10Si0.90 films on Si(100)

Title
Dependence of damage and strain on the temperature of Si irradiation in epitaxial Geㅊ.10Si0.90 films on Si(100)
Authors
D.Y.C. Lie송종한A. VantommeF. EisenM.-A. NicoletN.D. TheodoreT. K. CarnsK.L. Wang
Issue Date
1995-03
Publisher
Journal of Applied Physics
Citation
VOL 77, NO 6, 2329-2338
URI
http://pubs.kist.re.kr/handle/201004/24610
ISSN
0021-8979
Appears in Collections:
KIST Publication > Article
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