CCl4 가스를 이용한 대기압 MOCVD로 성장시킨 InGaAs에서의 탄소도핑 특성

Title
CCl4 가스를 이용한 대기압 MOCVD로 성장시킨 InGaAs에서의 탄소도핑 특성
Authors
김용손창식김성일이민석김무성최인훈민석기
Keywords
MOCVD; carbon doping; CCl4
Issue Date
1994-01
Publisher
응용물리
Citation
VOL 7, NO 4, 278-283
URI
http://pubs.kist.re.kr/handle/201004/24740
Appears in Collections:
KIST Publication > Article
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