The interfacial layer formation of the Al//2O//3Si structures grown by low-pressure metalorganic chemical vapor deposition.

Title
The interfacial layer formation of the Al//2O//3Si structures grown by low-pressure metalorganic chemical vapor deposition.
Authors
염상섭윤영수W. N. KangT. W. KimJ. Y. LeeChyeon KimH. LimH. L. Park
Keywords
thin films; Al//2O//3; MOCVD
Issue Date
1993-07
Publisher
Journal of applied physics
Citation
v. 74, no. 1, 760-762
URI
http://pubs.kist.re.kr/handle/201004/24756
Appears in Collections:
KIST Publication > Article
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