Undoped and Si-doped GaAs layer grown at low temperature by molecular beam epitaxy.

Title
Undoped and Si-doped GaAs layer grown at low temperature by molecular beam epitaxy.
Authors
김은규민석기T. G. KimH. Y. ChoH. S. KimJ. H. Park
Keywords
GaAs epilayer; low temperature growth; molecular beam epitaxy
Issue Date
1992-06
Publisher
Proc. KITE summer conf. '92
Citation
v. 15, no. 1, 298-301
URI
http://pubs.kist.re.kr/handle/201004/24811
Appears in Collections:
KIST Publication > Conference Paper
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