Schottky diode characteristics and deep levels on hydrogenated n-type GaAs.

Title
Schottky diode characteristics and deep levels on hydrogenated n-type GaAs.
Authors
김은규조훈영민석기김현수T. Kim
Keywords
schottky diode; deep level; hydrogenation; GaAs
Issue Date
1992-04
Publisher
Semicond. sci. technol.
Citation
v. 7, 695-697
URI
http://pubs.kist.re.kr/handle/201004/24816
Appears in Collections:
KIST Publication > Article
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