Hydrogenation effect on electrical and optical properties of GaAs epilayers grown on Si substrates by MOCVD.

Title
Hydrogenation effect on electrical and optical properties of GaAs epilayers grown on Si substrates by MOCVD.
Authors
김용김은규조훈영김현수김무성민석기
Keywords
hydrogenation; MOCVD; GaAs-on-Si
Issue Date
1991-05
Publisher
Applied physics letters
Citation
v. 58, 2405-2407
URI
http://pubs.kist.re.kr/handle/201004/24859
Appears in Collections:
KIST Publication > Article
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