Deep electron traps in GaAs layers grown on (100)Si substrates by metalorganic chemical vapor deposition.

Title
Deep electron traps in GaAs layers grown on (100)Si substrates by metalorganic chemical vapor deposition.
Authors
김은규조훈영김용김현수조성호민석기J. H. YoonM. S. Kim
Keywords
deep electron trap; GaAs on Si; metalorganic chemical vapor deposition (MOCVD)
Issue Date
1990-03
Publisher
Journal of applied physics
Citation
v. 67, no. 5, 2454-2456
URI
http://pubs.kist.re.kr/handle/201004/24897
Appears in Collections:
KIST Publication > Article
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