Characteristics of C-doped GaAs and critical layer thickness.

Title
Characteristics of C-doped GaAs and critical layer thickness.
Authors
김성일엄경숙김용김무성민석기곽명현마동성
Keywords
MOCVD; GaAs; carbon; critical layer
Issue Date
1990-01
Publisher
International symposium on the physics of semiconductor and its applications
Citation
, 364-?
URI
http://pubs.kist.re.kr/handle/201004/24917
Appears in Collections:
KIST Publication > Conference Paper
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