Pulsed excimer laser annealing effects of ion implanted silicon on insulator.

Title
Pulsed excimer laser annealing effects of ion implanted silicon on insulator.
Authors
김성일민석기김은규김용태김춘근김무성
Keywords
MOCVD; GaAs; laser annealing
Issue Date
1988-01
Publisher
Bull. Korean phys. soc.
Citation
v. 6, no. 2, 198-?
URI
http://pubs.kist.re.kr/handle/201004/24961
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE