Effect of InxGa1-xAs strain relaxation layers on optical and structural properties of InAs/GaAs quantum dots for the application to optical communication

Title
Effect of InxGa1-xAs strain relaxation layers on optical and structural properties of InAs/GaAs quantum dots for the application to optical communication
Authors
송진동박영민임재구신재철박용주최원준한일기조운조이정일
Keywords
Compound semiconductor; Self-assembled quantum dots; Photoluminescence; Strain relaxation layer
Issue Date
2003-10
Publisher
The First International Symposium on Future Issues in Nano-optoelectronics
Citation
, 95-98
URI
http://pubs.kist.re.kr/handle/201004/25172
Appears in Collections:
KIST Publication > Conference Paper
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