Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiquantum-well structure by dielectric capping layers

Title
Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiquantum-well structure by dielectric capping layers
Authors
유재수송진동김종민이용탁임한조
Keywords
InGaAs/GaAs; thermal annealing
Issue Date
2004-01
Publisher
Applied Physics A: Materials Science & Processing
Citation
v. 78, no. 1, 113-117
URI
http://pubs.kist.re.kr/handle/201004/25202
ISSN
0947-8396
Appears in Collections:
KIST Publication > Article
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