High performance of 1.54㎛ InGaAsP high-power tapered laser using high p-doped separate confinement layer and strain compensated multiple quantum wells

Title
High performance of 1.54㎛ InGaAsP high-power tapered laser using high p-doped separate confinement layer and strain compensated multiple quantum wells
Authors
허두창한일기이정일정지채
Keywords
High power laser diodes; Taper; Diffraction; Far-fields
Issue Date
2003-09
Publisher
2003 International Conference on Solid State Devices and Materials
Citation
, 178-179
URI
http://pubs.kist.re.kr/handle/201004/25229
Appears in Collections:
KIST Publication > Conference Paper
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