Effects of hydrogen annealing on the electrical properties of Si2Nb2O9 thin films

Title
Effects of hydrogen annealing on the electrical properties of Si2Nb2O9 thin films
Authors
김익수김용태김성일최인훈
Keywords
ferroelectric thin film; Si2Nb2O9; hydrogen annealing; curie temperature; interface trap
Issue Date
2003-11
Publisher
Journal of the Korean Physical Society
Citation
VOL 43, NO 5, 850-853
URI
http://pubs.kist.re.kr/handle/201004/25290
ISSN
0374-4884
Appears in Collections:
KIST Publication > Article
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