Etching characteristics of SrBi2Ta2O9(SBT) and CeO2 layers by using the inductively coupled plasma reactive ion etching (ICP RIE) process and fabrication of metal ferroelectric insulator semiconductor field effect transistor (MFISFET)

Title
Etching characteristics of SrBi2Ta2O9(SBT) and CeO2 layers by using the inductively coupled plasma reactive ion etching (ICP RIE) process and fabrication of metal ferroelectric insulator semiconductor field effect transistor (MFISFET)
Authors
심선일권영석김성일김용태장호정박정호
Issue Date
2003-11
Publisher
The 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Mate
Citation
, 164-164
URI
http://pubs.kist.re.kr/handle/201004/25295
Appears in Collections:
KIST Publication > Conference Paper
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