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dc.contributor.author심선일-
dc.contributor.author박정호-
dc.contributor.author권영석-
dc.contributor.author김성일-
dc.contributor.author김용태-
dc.date.accessioned2015-12-02T08:01:42Z-
dc.date.available2015-12-02T08:01:42Z-
dc.date.issued200311-
dc.identifier.other18619-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/25296-
dc.publisherAPHYS2003-11-
dc.subjectferroelectric-
dc.subjectFRAM-
dc.subjectMFISFET-
dc.subjectICP-
dc.subjectRIE-
dc.subjectetching-
dc.titleFabrication and characterization of Pt/SrBi2Ta2O9(SBT)/CeO2/Si metal ferroelectric insulator semiconductor field effect transistor (MFISFET) memory by using the inductively coupled plasma reactive ion etching (ICP RIE) process-
dc.typeConference Paper-
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