Improvement of electrical properties of ferroelectric gate oxide structure by using Al₂O₃ thin films as buffer insulator

Title
Improvement of electrical properties of ferroelectric gate oxide structure by using Al₂O₃ thin films as buffer insulator
Authors
최훈상임근식이종한김용태김성일유동철이정용최인훈
Keywords
ferroelectric; metal ferroelectric insulator semiconductor struct; memory window; buffer layer
Issue Date
2003-11
Publisher
Thin Solid Films
Citation
VOL 444, 276-281
URI
http://pubs.kist.re.kr/handle/201004/25301
ISSN
0040-6090
Appears in Collections:
KIST Publication > Article
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