Electrical and optical characterizations of InGaAs quantum dots grown by atomic layer epitaxy technique

Title
Electrical and optical characterizations of InGaAs quantum dots grown by atomic layer epitaxy technique
Authors
박영민박용주김광무신재철송진동이정일유건호
Keywords
InAs/GaAs 양자점; C-V; photoluminescence; atomic layer epitaxy
Issue Date
2003-02
Publisher
The 10th Korean Conference on Semiconductors
Citation
, 749-750
URI
http://pubs.kist.re.kr/handle/201004/25359
Appears in Collections:
KIST Publication > Conference Paper
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