Fabrication of wavelength-shifted In0.2Ga0.8As/GaAs multiple quantum well laser diodes by impurity-free vacancy disordering at different thermal annealing temperatures.

Title
Fabrication of wavelength-shifted In0.2Ga0.8As/GaAs multiple quantum well laser diodes by impurity-free vacancy disordering at different thermal annealing temperatures.
Authors
유재수송진동이용탁임한조
Keywords
InGaAs/GaAs; thermal annealing
Issue Date
2003-02
Publisher
Semiconductor Science and Technology
Citation
v. 18, 170-173
URI
http://pubs.kist.re.kr/handle/201004/25360
ISSN
0268-1242
Appears in Collections:
KIST Publication > Article
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