Fabrication of wavelength-shifted In0.2Ga0.8As/GaAs multiple quantum well laser diodes by impurity-free vacancy disordering at different thermal annealing temperatures.
- Title
- Fabrication of wavelength-shifted In0.2Ga0.8As/GaAs multiple quantum well laser diodes by impurity-free vacancy disordering at different thermal annealing temperatures.
- Keywords
- InGaAs/GaAs; thermal annealing
- Issue Date
- 2003-02
- Publisher
- Semiconductor Science and Technology
- Citation
- v. 18, 170-173
- ISSN
- 0268-1242
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
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