Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0.4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annea

Title
Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0.4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annea
Authors
유재수송진동김종민배성주이용탁임한조
Keywords
InGaAs/GaAs; thermal annealing
Issue Date
2003-04
Publisher
Applied Physics A: Materials Science & Processing
Citation
v. 76, no. 6, 979-982
URI
http://pubs.kist.re.kr/handle/201004/25379
ISSN
0947-8396
Appears in Collections:
KIST Publication > Article
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