DSpace at KIST: Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0.4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annea

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Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0.4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annea

Title: Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0.4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annea

Authors: 유재수; 송진동; 김종민; 배성주; 이용탁; 임한조

Keywords: InGaAs/GaAs; thermal annealing

Issue Date: 2003-04

Publisher: Applied Physics A: Materials Science & Processing

Citation: v. 76, no. 6, 979-982

URI: http://pubs.kist.re.kr/handle/201004/25379

ISSN: 0947-8396

Appears in Collections:: KIST Publication > Article

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