Structural optical properties of InAs/GaAs quantum dots grown by atomic layer MBE and its application to 1.13 um laser diodes

Title
Structural optical properties of InAs/GaAs quantum dots grown by atomic layer MBE and its application to 1.13 um laser diodes
Authors
송진동박영민신재철허두창배형철임재구박용주최원준한일기조운조이정일김형석박찬경
Keywords
InAs; quantum dots; atomic layer epitaxy; laser diodes
Issue Date
2003-05
Publisher
제10회 광전자 및 광통신 학술회의
Citation
VOL 10, 511-512
URI
http://pubs.kist.re.kr/handle/201004/25382
Appears in Collections:
KIST Publication > Conference Paper
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