Structural and optical properties of InGaAs/GaAs quantum dots using atomic layer epitaxy technique for the application of optical communication

Title
Structural and optical properties of InGaAs/GaAs quantum dots using atomic layer epitaxy technique for the application of optical communication
Authors
송진동박영민신재철임재구박용주최원준한일기조운조이정일이호성이정용
Keywords
InGaAs; GaAs; quantum dots; photoluminescence
Issue Date
2003-06
Publisher
Proc.of Asia-Pacific Workshop on Fundamentals & Application of Advanced Semiconductor Device AWAD'03
Citation
, 167-172
URI
http://pubs.kist.re.kr/handle/201004/25389
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE