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dc.contributor.authorYoon Shon-
dc.contributor.authorYoung Hae Kwon-
dc.contributor.authorY. S. Park-
dc.contributor.authorSh. U. Yuldashev-
dc.contributor.authorSeung Joo Lee-
dc.contributor.authorC. S. Park-
dc.contributor.authorK. J. Chung-
dc.contributor.authorS. J. Yoon-
dc.contributor.authorH. J. Kim-
dc.contributor.authorW. C. Lee-
dc.contributor.authorD. J. Fu-
dc.contributor.authorT. W. Kang-
dc.contributor.authorX. J. Fan-
dc.contributor.author박용주-
dc.contributor.author오형택-
dc.date.accessioned2015-12-02T08:02:44Z-
dc.date.available2015-12-02T08:02:44Z-
dc.date.issued200401-
dc.identifier.citationVOL 95, NO 2, 761-763-
dc.identifier.issn0021-8979-
dc.identifier.other18848-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/25482-
dc.publisherJournal of Applied Physics-
dc.subjectdiluted magnetic semiconductors-
dc.subjectCurie temperature-
dc.subjectGaN-
dc.subjection implantation-
dc.subjectphotoluminescence-
dc.titleFerromagnetic behavior of p-type GaN epilayer implanted with Fe+ ions-
dc.typeArticle-
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