5.6-nm p+/n junction Formation for sub-0.05μm PMOSFETs by Using Low-Energy B10H14 Ion Implantation
- 5.6-nm p+/n junction Formation for sub-0.05μm PMOSFETs by Using Low-Energy B10H14 Ion Implantation
- 박현순; 정광호; 서효원; 정형진; 최원국
- decaborane; cluster ion; implantation; 0.05 micro MOSPET; P-Junction; TD; TED; Shallow p+/n junction
- Issue Date
- Journal of the Korean Physical Society
- VOL 44, NO 67, 1594-1597
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- KIST Publication > Article
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