5.6-nm p+/n junction Formation for sub-0.05μm PMOSFETs by Using Low-Energy B10H14 Ion Implantation

Title
5.6-nm p+/n junction Formation for sub-0.05μm PMOSFETs by Using Low-Energy B10H14 Ion Implantation
Authors
박현순정광호서효원정형진최원국
Keywords
decaborane; cluster ion; implantation; 0.05 micro MOSPET; P-Junction; TD; TED; Shallow p+/n junction
Issue Date
2004-06
Publisher
Journal of the Korean Physical Society
Citation
VOL 44, NO 67, 1594-1597
URI
http://pubs.kist.re.kr/handle/201004/25494
ISSN
0374-4884
Appears in Collections:
KIST Publication > Article
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