Fabrication and characterization of metal-semiconductor field-effect-transistor-type quantum devices

Title
Fabrication and characterization of metal-semiconductor field-effect-transistor-type quantum devices
Authors
손승훈K. H. ChoS. W. Hwang김광무박용주Y. S. YuD. Ahn
Keywords
MESFET; quantum devices; heavily doped layer; e-beam lithography
Issue Date
2004-07
Publisher
Journal of Applied Physics
Citation
VOL 96, NO 1, 704-708
URI
http://pubs.kist.re.kr/handle/201004/25561
ISSN
021-8979
Appears in Collections:
KIST Publication > Article
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