Electrical characterization of InAs/InP self-assembled quantum dots with InGaAs strain-relief layers

Title
Electrical characterization of InAs/InP self-assembled quantum dots with InGaAs strain-relief layers
Authors
J.S. KimE.K. KimH. HwangK. ParkE. YoonI.W. Park박용주
Keywords
Deep-level transient spectroscopy (DLTS); quantum dots; energy level; emission and capture process; InAs/InP; InAs/InGaAs
Issue Date
2004-07
Publisher
Journal of the Korean Physical Society
Citation
VOL 45, NO 1, 170-174
URI
http://pubs.kist.re.kr/handle/201004/25563
ISSN
0374-4884
Appears in Collections:
KIST Publication > Article
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