Electrical charcaterization of InGaN/GaN quantum dots by deep level transient spectroscopy

Title
Electrical charcaterization of InGaN/GaN quantum dots by deep level transient spectroscopy
Authors
J.S. KimE.K. KimH.J. KimE. YoonI.W. Park박용주
Keywords
DLTS; InGaNQD; strain; MOCVD
Issue Date
2004-09
Publisher
Physica Status Solidi B
Citation
VOL 241, NO 12, 2811-2815
URI
http://pubs.kist.re.kr/handle/201004/25694
ISSN
0370-1972
Appears in Collections:
KIST Publication > Article
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