Writing Current Reduction for High-density Phase-change RAM

Title
Writing Current Reduction for High-density Phase-change RAM
Authors
Y.N. Hwang,S. H. LeeS. J. AhnS. Y. LeeK. C. RyooH. S. Hong구현철Y. FaiJ. H. OhH. J. KimW. C. JeongJ. H. ParkH. HoriiY. H. HaJ.H. YiG. H. KohG. T. JeongH. S. JeongKinam Kim
Keywords
writing Current; phase change RAM
Issue Date
2003-12
Publisher
IEDM Technical Digest
Citation
, 37.1.1-37.1.4
URI
http://pubs.kist.re.kr/handle/201004/25753
Appears in Collections:
KIST Publication > Conference Paper
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