High density integration of low current Phase-change RAM using structural modification based on 0.18 ?-CMOS technologies

Title
High density integration of low current Phase-change RAM using structural modification based on 0.18 ?-CMOS technologies
Authors
G. T. Jeong구현철Y.N. HwangS.H. LeeS.J. AhnS.Y. LeeK.C. RyooJ. S. HongF. YeungJ.H. OhH.J. KimW.C. JeongJ.H. ParkG.H. KohY. T. KimH. S. JeongKinam Kim
Keywords
Phase-change RAM; high density integration; low current
Issue Date
2004-05
Publisher
Proc. 24th International Conference on Microeletronics
Citation
, 389-392
URI
http://pubs.kist.re.kr/handle/201004/25754
Appears in Collections:
KIST Publication > Conference Paper
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