Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge1Sb2Te4/TiN cell structure

Title
Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge1Sb2Te4/TiN cell structure
Authors
강대환김태균정한주이택성김인호이경석김원목정병기안동호권민호권혁순김기범
Keywords
phase change memory
Issue Date
2004-09
Publisher
2004 International Conference on Solid State Devices and Materials
URI
http://pubs.kist.re.kr/handle/201004/26074
Appears in Collections:
KIST Publication > Conference Paper
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