Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy

Title
Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy
Authors
송진동박영민신재철임재구박용주최원준한일기이정일H.S. Kim박찬경
Keywords
quantum dots; MEE; wetting layer
Issue Date
2004-10
Publisher
Journal of the Applied Physics
Citation
VOL 96, NO 8, 4122-4125
URI
http://pubs.kist.re.kr/handle/201004/26209
ISSN
0021-8979
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE