Etch stop Process of SrBi2Ta2O9 thin film using CeO2 buffer layer for self aligned ferroelectric gate structure

Title
Etch stop Process of SrBi2Ta2O9 thin film using CeO2 buffer layer for self aligned ferroelectric gate structure
Authors
권영석심선일김익수김성일김용태최인훈
Issue Date
2004-03
Publisher
The 12th Seoul International Symposium on the Physics of Semiconductors and Applications-2004
Citation
, 174-174
URI
http://pubs.kist.re.kr/handle/201004/26263
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE