Electrical properties and ultrafast photo-response of InGaAs/InP grown by low-temperature molecular beam epitaxy with a GaAs decomposition source

Title
Electrical properties and ultrafast photo-response of InGaAs/InP grown by low-temperature molecular beam epitaxy with a GaAs decomposition source
Authors
김종민이용탁송진동J.H. Kim
Keywords
Defects; Molecular beam epitaxy; Phosphides
Issue Date
2004-04
Publisher
Journal of Crystal Growth
Citation
VOL 265, 8-13
URI
http://pubs.kist.re.kr/handle/201004/26338
ISSN
0022-0248
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE