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dc.contributor.author박희경-
dc.contributor.author김은규-
dc.contributor.author이창훈-
dc.contributor.author송진동-
dc.contributor.author최원준-
dc.contributor.author박용주-
dc.contributor.author이정일-
dc.date.accessioned2015-12-02T08:08:12Z-
dc.date.available2015-12-02T08:08:12Z-
dc.date.issued200407-
dc.identifier.citationVOL 45, NO 1, 223-226-
dc.identifier.issn0374-4884-
dc.identifier.other20003-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/26409-
dc.publisherJournal of the Korean Physical Society-
dc.subjectQuantum-dot infrared photodiodes-
dc.subjectSelf-assembled quantum dot-
dc.subjectInAs/GaAs-
dc.subjectDeep-level transient spectroscopy-
dc.subjectPhotoluminescence-
dc.titleElectrical Characterization of InAs/GaAs Quantum-Dot Infrared Photodiodes-
dc.typeArticle-
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