Rotation of the pinned direction in artificial antiferromagnetic tunnel junctions by field annealing
- Rotation of the pinned direction in artificial antiferromagnetic tunnel junctions by field annealing
- 전경인; 이제형; 신경호; 이긍원; 이병찬
- antiferromagnetic materials; magnetic annealing; tunnelling magnetoresistance; magnetic fields; artificial antiferromagnetic layer
- Issue Date
- IEEE Transactions on Magnetics
- VOL 40, NO 4, 2299-2301
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- KIST Publication > Article
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