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dc.contributor.author심선일-
dc.contributor.author권영석-
dc.contributor.author김성일-
dc.contributor.author김용태-
dc.contributor.author박정호-
dc.date.accessioned2015-12-02T08:12:48Z-
dc.date.available2015-12-02T08:12:48Z-
dc.date.issued200408-
dc.identifier.citationVOL 22, NO 4, 1559-1563-
dc.identifier.issn0734-2101-
dc.identifier.other19597-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/26978-
dc.publisherJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films-
dc.titleSelective etching process of SrBi2Ta2O9 and CeO2 for self-aligned ferroelectric gate structure-
dc.typeArticle-
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