The characteristics of 3-stacked InGaAs/GaAs QD quantum dot lasers grown by atomic layer molecular beam epitaxy

Title
The characteristics of 3-stacked InGaAs/GaAs QD quantum dot lasers grown by atomic layer molecular beam epitaxy
Authors
허두창송진동최원준이정일정지채한일기
Keywords
Quantum dot; Atomic layer epitaxy; laser diodes
Issue Date
2003-12
Publisher
CLEO/Pacific Rim 2003
Citation
, 618-618
URI
http://pubs.kist.re.kr/handle/201004/26983
Appears in Collections:
KIST Publication > Conference Paper
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